Journal: ACS Photonics
Article Title: Self-Referencing Photothermal Common-Path Interferometry to Measure Absorption of Si 3 N 4 Membranes for Laser-Light Sails
doi: 10.1021/acsphotonics.5c01886
Figure Lengend Snippet: (a) Side-view schematic of the PCI setup showing translation of the sample along the z -axis, and the AC and DC components of the detected signal. The sample is translated in the z -direction to find the peak of the AC signal, which occurs when the pump waist is at the sample surface; (b) AC component of the detected probe intensity ( V AC ) for the SiN x membrane with and without graphene. The pump intensity was manually attenuated using a variable ND-filter for the sample with graphene to obtain a V AC similar V AC to that of SiN x alone (inset). Solid lines are the measured V AC , while dashed lines represent the process of increasing attenuation to achieve a similar V AC with and without graphene. Because of this manual attenuation process over many orders of magnitude of pump power, it was possible to bring the V AC of graphene-on-SiN x very close to that of SiN x , but a slight difference in V AC remained. That difference can be addressed via when calculating the absorption. (c) V AC for the Si 3 N 4 membrane and Si 3 N 4 with graphene (data set 1), similarly obtained using a variable ND-filter. Due to the low loss of Si 3 N 4 , measurements spanned two data sets, and the average (solid lines) and standard deviation (shaded areas) of five measurements taken for Si 3 N 4 and Si 3 N 4 with graphene (data set 1) are shown. Dashed lines illustrate the process of attenuation and do not represent actual measured data. (d, e) Phase between the chopped pump and detected probe intensities vs the sample position for (d) the SiN x membrane and (e) Si 3 N 4 membrane with and without graphene (data set 1).
Article Snippet: To prepare the reference sample, we transferred chemical vapour deposition (CVD)-grown monolayer graphene onto Si 3 N 4 and SiN x membranes purchased from Norcada Inc. (see Supporting Information S2 for membrane geometry) and then measured the absorptivity ( A ref ) using variable-angle spectroscopic ellipsometry (see Supporting Information S3, S4, and S8 ) to be 1.5 ± 0.11% for the ∼194 nm thick Si 3 N 4 and 2.6 ± 0.16% for the ∼2-μm thick SiN x at 1064 nm.
Techniques: Membrane, Standard Deviation